4th International Symposium on DSA, November 11-13, 2018, Sapporo Park Hotel, Sapporo, Japan
             






    DSA 2018 Banquet in Sapporo Beer Museum, November 12, 2018

DSA 2018 Program
Sunday, November 11, 2018
17:00 – 19:30 Opening Reception
Monday, November 12, 2018
9:00 – 9:10 Opening Remarks
T. Azuma (EIDEC)
Keynote Presentaion Chair: T. Hayakawa (Tokyo Insitirute of Technology)
9:10 – 9:50 Pattern Defect Reduction Efforts for Chemo-Epitaxy DSA Process (Keynote) Makoto Muramatsu, Tokyo Electron Kyushu
Session 1: Materials 1 Chair: T. Hayakawa (Tokyo Insitirute of Technology)
9:50 – 10:10 Revolutionary or Evolutionary DSA Chemistry for IC Device Adoption? M.A. Hockey, K. Xu. and R. Daugherty, Brewer Sci., USA
10:10 – 10:30 In-Situ Measurement of Self-Assembling Blockcopolymer Thin Film with GISAXS T. Omosu 1, M. Takenaka 1,2, K. Yoshimoto 1,4, T. Azuma 4, K. Kodera 4, 1 Kyoto Univ., 2 RIKEN 3 C-PIER and 4 EIDEC, Japan
10:30 - 10:50 Rapid Self-Assembled High χ Block Copolymer for Large-Scale Sub-10 nm Nanopattern by Flash Light J.H. Kim, H.M. Jin , D.y. Park, K.J. Lee and S.O. Kim, KAIST, Korea
10:50 – 11:10 Carbohydrate-Based Block Copolymer Self-Assemblies: Ultra-fast Nanorganization of sub_10nm Highly Nanostructured Thin Films R. Borsali, Univ. Grenoble Alpes, France
11:10 – 11:25 Coffee Break
Session 2: Etch, Simulation and Integration Chair: K. Yoshimoto (Kyoto Univ.)
11:25 – 11:45 Directed Self-Assembly of Block Copolymer for the Fabrication of Nanowire-Based Electromechanical Devices C. Pinto-Gómez, R. Mas, F. Pérez-Murano, J. Bausells, M. Fernández-Regúlez, IMB-CNM, Spain
11:45 – 12:05 Continuum Models for Directed Self-Assembly M. Müller and J.C.O. Rey, Georg-August Universität Göttingen, Germany
Lunch
12:05 – 13:05 Lunch
Poster session (13:05 – 14:05)
Poster session Chair: S. Nagahara (TEL)
P01 Wet Etch Challenges for Wide-Range Directed Self-Assembly C. Nakayama 1, M. Harumoto 1, Y. Tanaka 1, Y. Arisawa 1, M. Asai 1, K. Yamamoto 2 and K. Morita 2, 1 SCREEN Semiconductor Solutions and 2 Oji Holdings, Japan
P02 Oligosaccharide-Based Monodisperse Block Copolymers for Sub-10 nm Microphase Separation T. Isono 1, R. Komaki 1, N. Kawakami 1, H. Mamiya 2, K. Tajima 1, R. Borsali 3 and T. Satoh 1, 1 Hokkaido Univ., 2 NIMS, Japan and 3 Univ. Grenoble Alps, France
P03 Impact of Topography of Chemical Pattern on Directed Self-Assembly Process: Focusing on Defectivity D. Bae 1,2, H.S. Suh 2 and Y.S. Jung 1, 1 KAIST, Korea and 2 imec, Belgium
P04 Resist-Free DSA Chemoepitaxy Approach for Line/Space Patterning T.J. Giammaria 1, A. Gharbi 1, A. Paquet 1,2, C. Navarro 2, C. Nicolet 2, P. Nealey 3 and R. Tiron 1, 1 CEA-LETI and 2 Arkema GRL, France and 3 Univ. of Chicago, USA
P05 High-χ Modified Fluorine-Containing Block Copolymer and Thin Film S. Jo, S. Jeon, T. Jun and D.Y. Ryu, Yonsei Univ., Korea
P06 Silicon Containing High-χ Block Copolymers for Directed Self-Assembly (DSA) for Sub-10 nm L/S Patterning. K. Aizu 1, K. Watanabe 1, K. Watabe 1, K. Hirahara 2, A. Takano 3, Y. Matsushita 3, 1 Hitachi Chemical, 2 Yamagata Univ. and 3 Nagoya Univ., Japan
P07 DSA Technology with Metal Nanocomposites for Advanced Interconnection T. Fukushima, M. Murugesan and M. Koyanagi, Tohoku Univ., Japan
P08 Influence of PS-b-PMMA Block Copolymer Quality on L/S Perpendicular Orientation
Y. Kawaguchi, T Kosaka, R. Matsuki and R. Ogaki, HORIBA STEC, Japan
P09 Order to Disorder Transition of Block Copolymer Thin Films on Preferential Wetting Condition Y. Kim 1, H. Ahn 2, J.U. Kim 3 and D.Y. Ryu 1, 1 Yonsei Univ., 2 POSTECH and 3 Ulsan Natl. Inst. of Sci. and Technol., Korea
Invited Paper I Chair: J. Kline (NIST)
14:05 – 14:35 Integration Challenges for DSA Implementation Raluca Tiron, CEA-Leti, France
Session 3: Processing 1 Chair: J. Kline (NIST)
14:35 – 14:55 Kinetics of Defect Annihilation in Chemo-Epitaxy DSA J. Li 1, P.A.R. Delgadillo 2, H.S. Suh 2, G. Mannaert 2, N. Vandenbroeck 2, P.F. Nealey 1, 1 Univ. of Chicago, USA and 2 IMEC, Belgium
14:55 – 15:15 Extracting Block Copolymer Dynamics from GISAXS M. Fernández-Regúlez 1,2, E. Solano 3, S. Gottlieb 1, C. Pinto-Gómez 1, L. Evangelio 1,3, G. Rius 1, J. Fraxedas 3, F. Pérez-Murano 1, H. Amenitsch 5, E. Gutiérrez 6, A. Nogales 6, M.C. García-Gutiérrez 6 and T. Ezquerra 6, 1 IMB-CNM, 2 Univ. Autonoma de Barcelona, 3 NCD-SWEET beamline, 4 ICN2, Spain, 5 Graz Univ. of Technol., Austria and 6 IEM-CSIC, Spain
15:15 – 15:35 Defect Mitigation in sub-20 nm Patterning with High-Chi, Silicon Containing Block Copolymers J. Doise 1, G. Mannaert 1, H.S. Suh 1, P. Rincon 1, G. Vandenberghe 1, C.G. Willson 2 and C.J. Ellison 3, 1 imec, Belgium, 2 Univ. of Texas and 3 Univ. of Minnesota, USA
15:35 – 15:55 Chemical Patterns Obtained with Spacer Patterning Lithography for Directed Self-Assembly of Block Copolymer: Process ACE A. Paquet 1,2 , A. Gharbi 1, P. Pimenta-Barros 1, G. Chamiot-Maitral 1, X. Chevalier 2, C. Navarro 2, C. Nicolet 2, K. Sakavuyi 3, K. Xu 3, L. Pain 1, I. Cayrefourcq 2, P. Nealey 4, R. Tiron 1, 1 CEA-LETI, 2 Arkema, France, 3 Brewer Science and 4 Univ. of Chicago, USA
15:55 – 16:10 Coffee Break
Session 4: Materials 2 Chair: H. S. Suh (imec)
16:10 – 16:30 Evolution of Perpendicular Lamellae in High-χ Block Copolymers via In-Situ Atomic Force Microscopy A. Chandra 1, R. Nakatani 1, Y. Nabae 1, Y. Seino 2, H. Sato 2, Y. Kasahara 2, T. Azuma 2 and T. Hayakawa 1, 1 Tokyo Inst. of Technol. and 2 EIDEC, Japan
16:30 – 16:50 Fabrication of Refractive Index Tunable Visible-Light Metasurface by Block Copolymer Self-Assembly
K.H. Han, J.Y. Kim, J. Shin, and S.O. Kim, KAIST, Korea
16:50 – 17:10 Hemicellulose Block Copolymer Enabling Wider Range DSA and High Fabrication Property for Feasible DSA Application K. Morita 1, K. Yamamoto 1, M. Harumoto 2, Y. Tanaka 2, C. Nakayama 2, Y. Arisawa 2 and M. Asai 2, 1 Oji Holdings and 2 SCREEN Semiconductor Solutions, Japan
17:10 – 17:30 Sub-10 nm Self-Assembly in a High-Chi Block Copolymer with Versatile Etch Selectivity
K. Azuma 1,2, J. Sun 2, Y. Choo 3, Y. Rokhelenko 3, B. Schweitzer 4, T. Hayakawa 1, C.O. Osuji 3 and P. Gopalan 2, 1 Tokyo Inst. of Technol., Japan, 2 Univ. of Wisconsin-Madison, 3 Yale Univ. and 4 Berea College, USA
17:30 – 17:50 Ordering Kinetic in Two-Dimensional Hexagonal Pattern of Cylinder-Forming PS-b-PMMA Block Copolymer Thin Films M. Perego 1, G. Seguini 1, F. Zanenga 1,2 and M. Laus 2, 1 IMM-CNR and 2 Univ. del Piemonte Orientale, Itary
Conference Dinner
18:30 - 19:00 Bus Transportation
19:00 – 22:00 Conference Dinner (Sapporo Beer Museum)
Tuesday, November 13, 2018
Invited paper Chiar: M. Takenaka (Kyoko Univ.)
9:20 – 9:50 Strategies for Small to Large Scale Block Copolymer Self-Assembly (Invited) D.Y. Ryu, Yonsei Univ., Korea
Session 5: Proceessing 2 Chiar: M. Takenaka (Kyoko Univ.)
9:50 – 10:10 Defect Reduction Strategy for LiNe Flow: Back to Basics H.S. Suh, P.R. Delgadillo, D. Bae, J. Li, J. Doise, N. Vandenbroeck, G. Mannaert, G. Vandenberghe, imec, Belgium
 9:50 – 10:10 Impact of Topography of Chemical Pattern on Directed Self-Assembly Process: Focusing on Defectivity D. Bae 1,2, H.S. Suh 2 and Y.S. Jung 1, 1 KAIST, Korea and 2 imec, Belgium
10:10 – 10:30 Silicon Nanowires Patterning and Integration Using DSA Lithography M. Argoud 1, P.P. Barros 1, Z. Chalupa 1, G. Claveau 1, G. Chamiot-Maitral 1, A. Bernadac 1, C. Navarro 2, C. Nicolet 2, I. Cayrefourcq 2, R. Tiron 1, 1 CEA-LETI and 2 ARKEMA FRANCE, France
10:30 – 10:45 Coffee Break
10:45 – 11:05 Time-Resolved Investigation of TMA Diffusion Process in PS, PMMA and PS-r-PMMA Thin Films during SIS by In-Situ Spectroscopic Ellipsometry E. Cianci 1, D. Nazzari 1,2, G. Seguini 1 and M. Perego 1, 1 IMM-CNR and Univ. Statale di Milano, Itary
11:05 – 11:25 DSA Materials Filtration T. Umeda and S. Tsuzuki, Nihon Pall, Japan
11:25 – 11:45 Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
A. Löfstrand, M. Graczyk, D. Suyatin, A. Kvennefors, I. Maximov, J. Svensson and L.-E. Wernersson, Lund Univ., Sweden
Session 6: 2D and 3D Metrology Chair: D. Sunday (NIST)
11:45 – 12:05 DSA Process Roughness Characterization Through Power Spectral Density (PSD) R.L. Tiec 1, S. Levi 1, P. Pimenta-Barros 2, M. Argoud 2, Z. Chalupa 2, A. Bernadac 2, C. Vannuffel 2, S. Rey 2, G.C. Maitral 2, R. Tiron 2, 1Applied Materials and 2 Univ. Grenoble, France
12:05 – 12:25 Accelerate the Analysis and Optimization of Lamellar BCP Process Using Machine Learning A. Derville, G. Gey, J. Baderot, X. Chevalier, G. Bernard, J. Foucher and I. Cayrefourcq, POLLEN Metrology, France
Lunch
12:25 – 13:25 ( Lunch
Session 7: Materials 3 Chair: T. Nagai (JSR)
13:25 – 13:45 Microdomain Orientation of Self-Assembled Block Copolymer Vertically to the Substrate by Polymer Brush Grafting
W. Lee 1, S. Park 1 and V. Sethuraman 2, N. Rebello 2, V. Ganesan 2 and D.Y. Ryu 1, 1 Yonsei Univ. and 2 Univ. of Texas Austin, USA
13:45 – 14:05 Post-Polymerization Modification of Polystyrene-block-Poly(Methyl Methacrylate) for Fabricating Sub-10 nm Feature Size
K. Yoshida 1, S. Tanaka 1, K. Miyagi 2, A. Yamazaki 2, T. Isono 1, T. Yamamoto 1, K. Tajima 1, R. Borsali 3 and T. Satoh 1, 1 Hokkaido Univ., 2 Tokyo Ohka Kogyo, Japan and 3 Cermav, France
14:05 – 14:25 Block Copolymer Self-Assembly on the Light-absorbing Graphene Layer by Using Laser Writing
G.G. Yang, H.M. Jin and S.O. Kim, KAIST, Korea
14:25 – 14:45 Evaluation of High-χ Silicon-Containing BCPs Performances for DSA Applications X. Chevalier 1, M. Zelsmann 2, P. Bezard 2, G. Fleury 3, C. Nicolet 1, K. Sakavuyi 4, L. Pain 5, C. Navarro 1, D. Jurajda 3, I. Cayrefourcq 1, 1 ARKEMA FRANCE, 2 Univ. Grenoble Alpes, 3 Univ. Bordeaux, France, 4 Brewer Sci., USA and 5 CEA-LETI, France
14:45 – 15:05 Sub-5 nm Patterning by Self-Assembly of Hydroxyl-Containing Block Copolymers C. Wang, X. Li and H. Deng, Fudan Univ., China
15:05 – 15:20 Coffee Break
Chair: T. Nagai (JSR)
15:20 – 15:40 χN effect on Composition Fluctuation of Block Copolymer Self-assembly T. Jun, Y. Lee, S. Jo, and D.Y. Ryu, Yonsei Univ., Korea
15:40 – 16:00 Ultra-Fast Directed Self-Assembly Materials for Sub-5 nm Patterning Application X. Li, J. Zhou, Y. Peng, H. Deng, Fudan Univ., China
16:00 – 16:20 Visualization of NL Polymer Distribution in NIL Guides for DSA K. Asakawa, N. Sasao, T. Sawabe and S. Sugimura, Toshiba Memory, Japan
16:20 – 16:40 High-Chi Silicon Containing Block Copolymers: Materials and Processes for Orientation Control and Directed Self-Assembly C.J. Ellison 1 and C.G. Willson 2, 1 Univ. of Minnesota and 2 Univ. of Texas, USA
Discussion, Voting and adjourn
16:40 – 17:00 Debate and Voting
T. Azuma (EIDEC)
17:00 – 17:10 Closing Remarks
S. Nagahara (TEL)



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